Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.


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    Title :

    Enhanced Terahertz Emission from InAs Quantum Dots on GaAs


    Contributors:
    Park, H. (author) / Kim, J. (author) / Moon, K. (author) / Han, H. (author) / Choi, W. J. (author) / Lee, J. I. (author)


    Publication date :

    2006-09-01


    Size :

    1240955 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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