Summary form only given. The authors propose using the intersubband (ISB)-transition in self-assembled InAs/GaAs quantum dots (QDs) for THz electromagnetic wave emission, by considering the following features of the QDs: the ISB energy spacing corresponds to the photon energy in the THz frequency region, the quantum levels are completely discrete, and whenever the spacing of the quantum levels are not equal to the phonon energy, it is expected that nonradiative ISB-relaxation is greatly suppressed. They utilize a pin diode structure to observe the ISB-emission from the QDs, where both electrons and holes are injected into the QDs, and when the electrons relax from higher quantum levels to lower ones, the ISB-emission can be observed.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Observation of tera-hertz electromagnetic wave emission from InAs/GaAs quantum dots


    Contributors:
    Furukawa, Y. (author) / Noda, S. (author) / Ishii, M. (author) / Takeya, T. (author)


    Publication date :

    1999-01-01


    Size :

    269990 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Enhanced Terahertz Emission from InAs Quantum Dots on GaAs

    Park, H. / Kim, J. / Moon, K. et al. | IEEE | 2006


    10 Tera Hertz Operation in One-Dimensional Quantum Interference Transistor (1-D QUIT) Devices

    Islam, S. K. / Jain, F. C. | British Library Online Contents | 1998



    MOCVD growth of InAs/GaAs quantum dots and laser diodes

    Stewart, K. / Tan, H.H. / Wong-Leong, J. et al. | IEEE | 2004


    MOCVD Growth of InAs/GaAs Quantum Dots and Diode Lasers

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004