Terahertz emission from (100) p-type InAs illuminated by ultrafast near-infrared pulses is investigated. A two-fold rotational symmetry was observed when rotated about the surface normal. A quadratic relationship was found for the emission dependence on optical pump power. These suggest the presence of photocarrier transport and optical rectification mechanisms. The InAs emission was found to exceed that of a blackbody radiator for frequencies below 1 THz for nominal input power levels. The generated power was found to be roughly two orders of magnitude greater than a 1mm ZnTe emitter.
Terahertz emission from (100)p-InAs
2005-01-01
1044798 byte
Conference paper
Electronic Resource
English
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