Terahertz (THz) emission properties of p-InAs surface radiation under the different excitations of femtosecond pulses are studied by means of time-domain spectroscopy. The experimental results show that the spectral waveform and amplitude of terahertz radiation are different for the excitations with different wavelengths. The full-width of half-maximum (FWHM) of THz radiation excited by the short wavelength of pulse is larger than that of the long wavelength. THz emission strength increases with increasing of pump wavelength. The peak amplitude of THz pulse increases linearly with increasing of the excitation power. It provides a useful reference for the application of THz emitter.
Terahertz Emission Properties of p-InAs Surface Radiation under Different Excitations
2006-09-01
1139313 byte
Conference paper
Electronic Resource
English
Terahertz emission from (100)p-InAs
IEEE | 2005
|Modeling of Terahertz Radiation from InSb and InAs
British Library Online Contents | 2005
|Terahertz radiation from InAs film on Si substrate
IEEE | 2004
|Monte Carlo Study of Terahertz Radiation from InAs
British Library Online Contents | 2005
|