We report results of electrical characterization studies of Nichia NLPB500 blue LEDs. The devices incorporate an AlGaN:Mg/InGaN:Si:Zn/GaN:Si double heterostructure and were subject to high-current stress for short periods of time. The electrical characterization included IV, CV, DLTS and admittance spectroscopy. DC IV measurements showed large reverse leakage currents and diode ideality factors around n=5 at room temperature.


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    Title :

    Electrical characterization of blue AlGaN/InGaN/GaN LEDs


    Contributors:
    Lee, L. (author) / Osinski, M. (author) / Malloy, K.J. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 332-333 vol.1


    Publication date :

    1994-01-01


    Size :

    120021 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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