We report results of electrical characterization studies of Nichia NLPB500 blue LEDs. The devices incorporate an AlGaN:Mg/InGaN:Si:Zn/GaN:Si double heterostructure and were subject to high-current stress for short periods of time. The electrical characterization included IV, CV, DLTS and admittance spectroscopy. DC IV measurements showed large reverse leakage currents and diode ideality factors around n=5 at room temperature.


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    Titel :

    Electrical characterization of blue AlGaN/InGaN/GaN LEDs


    Beteiligte:
    Lee, L. (Autor:in) / Osinski, M. (Autor:in) / Malloy, K.J. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 332-333 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    120021 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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