We report results of electrical characterization studies of Nichia NLPB500 blue LEDs. The devices incorporate an AlGaN:Mg/InGaN:Si:Zn/GaN:Si double heterostructure and were subject to high-current stress for short periods of time. The electrical characterization included IV, CV, DLTS and admittance spectroscopy. DC IV measurements showed large reverse leakage currents and diode ideality factors around n=5 at room temperature.
Electrical characterization of blue AlGaN/InGaN/GaN LEDs
Proceedings of LEOS'94 ; 1 ; 332-333 vol.1
01.01.1994
120021 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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