Summary form only given. We study experimentally the emission dynamics of an optically pumped MOCVD grown 1.3 /spl mu/m (GaIn)(NAs)/GaAs VCSEL with a particular focus on the temperature dependence of the emission. We use optical excitation with a 100 fs Ti:sapphire laser to measure the emission dynamics of our VCSEL. The dynamics at room temperature are in the picosecond range (peak delay-time of 15.5 ps after excitation and pulse width of 10.5 ps). Moreover, we find laser emission with picosecond dynamics for temperatures between 30 K and 388 K.


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    Title :

    Physics of 1.3 /spl mu/m (GaIn)(NAs)/GaAs semiconductor lasers


    Contributors:
    Hofmann, M. (author) / Gerhardt, N. (author) / Wagner, A. (author) / Stolz, W. (author) / Koch, S.W. (author) / Ruhle, W.W. (author) / Hader, J. (author) / Moloney, J.V. (author) / Schneider, H.C. (author) / Chow, W.W. (author)


    Publication date :

    2001-01-01


    Size :

    153653 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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