Summary form only given. We study experimentally the emission dynamics of an optically pumped MOCVD grown 1.3 /spl mu/m (GaIn)(NAs)/GaAs VCSEL with a particular focus on the temperature dependence of the emission. We use optical excitation with a 100 fs Ti:sapphire laser to measure the emission dynamics of our VCSEL. The dynamics at room temperature are in the picosecond range (peak delay-time of 15.5 ps after excitation and pulse width of 10.5 ps). Moreover, we find laser emission with picosecond dynamics for temperatures between 30 K and 388 K.


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    Titel :

    Physics of 1.3 /spl mu/m (GaIn)(NAs)/GaAs semiconductor lasers


    Beteiligte:
    Hofmann, M. (Autor:in) / Gerhardt, N. (Autor:in) / Wagner, A. (Autor:in) / Stolz, W. (Autor:in) / Koch, S.W. (Autor:in) / Ruhle, W.W. (Autor:in) / Hader, J. (Autor:in) / Moloney, J.V. (Autor:in) / Schneider, H.C. (Autor:in) / Chow, W.W. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    153653 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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