We have developed GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence by optimizing the optical confinement in the active layer. A small aspect ratio of 1.3 and a high output power of 200 mW with kink-free operation have been achieved.


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    Title :

    GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence


    Contributors:
    Bessho, Y. (author) / Kano, T. (author) / Yamaguchi, T. (author) / Inoue, D. (author) / Nomura, Y. (author) / Shono, M. (author)


    Publication date :

    2004-01-01


    Size :

    135132 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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