We have developed GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence by optimizing the optical confinement in the active layer. A small aspect ratio of 1.3 and a high output power of 200 mW with kink-free operation have been achieved.


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    Titel :

    GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence


    Beteiligte:
    Bessho, Y. (Autor:in) / Kano, T. (Autor:in) / Yamaguchi, T. (Autor:in) / Inoue, D. (Autor:in) / Nomura, Y. (Autor:in) / Shono, M. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    135132 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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