We have developed GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence by optimizing the optical confinement in the active layer. A small aspect ratio of 1.3 and a high output power of 200 mW with kink-free operation have been achieved.
GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence
2004-01-01
135132 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
GaN-based High-Power Blue-Violet Laser Diodes with a Small Aspect Ratio for Beam Divergence
British Library Conference Proceedings | 2004
|High-Power Blue-Violet Laser Diodes with Improved Beam Divergence and High COD Level
British Library Conference Proceedings | 2005
|High-Power Blue-Violet Laser Diodes on GaN Substrates
British Library Conference Proceedings | 2004
|High-power blue-violet laser diodes on GaN substrates
IEEE | 2004
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