We have fabricated 400-nm-band GaN-based blue-violet laser diodes (BV-LDs) with high reliability on GaN substrates. Under 45 mW continuous wave (CW) operation at 60/spl deg/C, these LDs have been operating stably for more than 1400 h. We have adopted the narrow ridge width of 1.4 /spl mu/m and both sides of ridge stripe are covered with a stacked layer of Si on SiO/sub 2/. As a result, we have succeed in producing BV-LDs with a kink-free output power of more than 150 mW. The threshold current was 35.4 mA at 25/spl deg/C. The operating current and voltage were 65.8 mW and 4.66 V, respectively, under 45 mW CW operation at 25/spl deg/C. Their characteristics came close to surpassing the best characteristics of BV-LDs grown on ELO-GaN/sapphire, demonstrating that practical BV-LDs suitable for next-generation blu-ray disc system can be produced on GaN substrates.


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    Titel :

    High-power blue-violet laser diodes on GaN substrates


    Beteiligte:
    Mizuno, T. (Autor:in) / Takeya, M. (Autor:in) / Ikeda, S. (Autor:in) / Fujimoto, T. (Autor:in) / Ohfuji, Y. (Autor:in) / Oikawa, K. (Autor:in) / Taniguchi, M. (Autor:in) / Ichinokura, H. (Autor:in) / Hashizu, T. (Autor:in) / Ikeda, M. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    169125 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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