GaN-based laser diodes for 405 nm high-power applications are demonstrated. By decreasing the Al concentration of n-cladding layers, the vertical divergence angle was reduced to <18/spl deg/ and the average COD level was increase to >300 mW.
High-power blue-violet laser diodes with improved beam divergence and high COD level
2005-01-01
269449 byte
Conference paper
Electronic Resource
English
High-Power Blue-Violet Laser Diodes with Improved Beam Divergence and High COD Level
British Library Conference Proceedings | 2005
|GaN-based High-Power Blue-Violet Laser Diodes with a Small Aspect Ratio for Beam Divergence
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