GaN-based laser diodes for 405 nm high-power applications are demonstrated. By decreasing the Al concentration of n-cladding layers, the vertical divergence angle was reduced to <18/spl deg/ and the average COD level was increase to >300 mW.


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    Title :

    High-power blue-violet laser diodes with improved beam divergence and high COD level


    Contributors:
    Ryu, H.Y. (author) / Ha, K.H. (author) / Lee, S.N. (author) / Choi, K.K. (author) / Chang, T.H. (author) / Son, J.K. (author) / Chae, J.H. (author) / Chae, S.H. (author) / Paek, H.S. (author) / Sung, Y.J. (author)


    Publication date :

    2005-01-01


    Size :

    269449 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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