The effect of integrating a chirped mirror at one end of the monolithic semiconductor lasers to act as a group delay mirror was considered. A multi-layered mirror can be fabricated by etching air slots into the waveguide structure. The system is examined numerically using a time domain travelling wave method. The multi-layer mirror is modelled using a transfer matrix method. The parameters chosen correspond to a GaAs-InGaAsP-InP multiple quantum well laser operating at a wavelength 1.55 /spl mu/m. The effect of dispersion compensation on the pulse duration and on the time band-width product of the pulses. Suitable multi-layer mirror elements are suggested, taking fabrication tolerances into account.


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    Title :

    Passively mode-locked monolithic semiconductor diode lasers incorporating dispersion compensation


    Contributors:
    Flynn, M.B. (author) / O'Faolain, L. (author) / Krauss, T.F. (author)


    Publication date :

    2004-01-01


    Size :

    105494 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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