The effect of integrating a chirped mirror at one end of the monolithic semiconductor lasers to act as a group delay mirror was considered. A multi-layered mirror can be fabricated by etching air slots into the waveguide structure. The system is examined numerically using a time domain travelling wave method. The multi-layer mirror is modelled using a transfer matrix method. The parameters chosen correspond to a GaAs-InGaAsP-InP multiple quantum well laser operating at a wavelength 1.55 /spl mu/m. The effect of dispersion compensation on the pulse duration and on the time band-width product of the pulses. Suitable multi-layer mirror elements are suggested, taking fabrication tolerances into account.


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    Titel :

    Passively mode-locked monolithic semiconductor diode lasers incorporating dispersion compensation


    Beteiligte:
    Flynn, M.B. (Autor:in) / O'Faolain, L. (Autor:in) / Krauss, T.F. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    105494 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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