The bandgap tuning by dielectric cap quantum well disordering (DCQWD) method has been widely used to realize the integration of optoelectronic or photonic devices without any regrowth step on a single wafer. Since the DCQWD technique has lots of merit in price and fabrication compared with the regrowth technique, there have been a lot of studies about dielectric capping layers to control QWD. In this study, we concerned the effect of dieiectric-semiconductor capping layer combination. Our study was focused to find out the effect of semiconductor capping layer on the DCQWD, and to find out optimum dielectric-semiconductor capping layer combination for a device application. The InGaAs/InGaAsP single quantum well (QW) structure used in this experiment was grown by chemical beam epitaxy (CBE) on a n-type InP substrate. In order to investigate the effect of semiconductor cap layer on DCQWD, three samples with different semiconductor cap layers (InP, InGaAs and InGaAsP(1.25Q)) were prepared.


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    Title :

    Effect of dielectric-semiconductor capping layer combination on the dielectric cap quantum well disordering of InGaAs/InGaAsP quantum well structure


    Contributors:
    Hee Taek Yi, (author) / Won Jun Choi, (author) / Deok Ha Woo, (author) / Sun Ho Kim, (author) / Kwang Nham Kang, (author) / Jaewon Cho, (author) / Jong Chang Yi, (author)


    Publication date :

    1999-01-01


    Size :

    144725 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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