The bandgap tuning by dielectric cap quantum well disordering (DCQWD) method has been widely used to realize the integration of optoelectronic or photonic devices without any regrowth step on a single wafer. Since the DCQWD technique has lots of merit in price and fabrication compared with the regrowth technique, there have been a lot of studies about dielectric capping layers to control QWD. In this study, we concerned the effect of dieiectric-semiconductor capping layer combination. Our study was focused to find out the effect of semiconductor capping layer on the DCQWD, and to find out optimum dielectric-semiconductor capping layer combination for a device application. The InGaAs/InGaAsP single quantum well (QW) structure used in this experiment was grown by chemical beam epitaxy (CBE) on a n-type InP substrate. In order to investigate the effect of semiconductor cap layer on DCQWD, three samples with different semiconductor cap layers (InP, InGaAs and InGaAsP(1.25Q)) were prepared.


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    Titel :

    Effect of dielectric-semiconductor capping layer combination on the dielectric cap quantum well disordering of InGaAs/InGaAsP quantum well structure


    Beteiligte:
    Hee Taek Yi, (Autor:in) / Won Jun Choi, (Autor:in) / Deok Ha Woo, (Autor:in) / Sun Ho Kim, (Autor:in) / Kwang Nham Kang, (Autor:in) / Jaewon Cho, (Autor:in) / Jong Chang Yi, (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    144725 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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