Impurity-free quantum well disordering has been used for the wavelength tuning of strained InGaAsP/InP multiple-quantum-well (MQW) structures. By implementing different kinds of dielectric caps, damage enhanced and thermally induced quantum well intermixing were carried out for the bandgap engineering of the MQW after wafer growth. Two different combinations of the dielectric capping were selected for extended-cavity laser fabrication to evaluate the effects of quantum well disordering.


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    Title :

    Postgrowth wavelength tuning of InGaAsP/InP multiple quantum wells using dielectric-cap disordering


    Contributors:
    Tao-Wei Chou, (author) / Chun-Hung Lai, (author) / Chia-Hsuan Lin, (author) / Wang, T.J. (author) / Tsai, W.H. (author) / Yee, H.H. (author)


    Publication date :

    2003-01-01


    Size :

    71062 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English