We demonstrate for the first time key components of a fabrication sequence for immediately manufacturing monolithic optoelectronic very large scale integration (OE-VLSI) circuits and systems. An OE transceiver (generic smart pixel) was designed, regrown, and is nearing completion to demonstrate the high-density integration of LEDs, ridge lasers, and in-plane surface emitting lasers (IPSELs) with state-of-the-art VLSI GaAs MESFET transceiver designs.<>


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Optoelectronic VLSI circuit fabrication


    Contributors:

    Published in:

    Publication date :

    1993-01-01


    Size :

    259898 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Optoelectronic VLSI Circuit Fabrication

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993



    Solutions to the Fabrication Problems of Hybrid Optoelectronic VLSI CMOS Chips

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Parallel architectures for optoelectronic VLSI processing

    Fey, D. / Grimm, G. / Erhard, W. et al. | British Library Conference Proceedings | 1999


    Monolithic Optoelectronic Integrated Circuit

    Bhasin, Kul B. / Walters, Wayne / Gustafsen, Jerry et al. | NTRS | 1990