We demonstrate for the first time key components of a fabrication sequence for immediately manufacturing monolithic optoelectronic very large scale integration (OE-VLSI) circuits and systems. An OE transceiver (generic smart pixel) was designed, regrown, and is nearing completion to demonstrate the high-density integration of LEDs, ridge lasers, and in-plane surface emitting lasers (IPSELs) with state-of-the-art VLSI GaAs MESFET transceiver designs.<>


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    Titel :

    Optoelectronic VLSI circuit fabrication


    Beteiligte:
    Shenoy, K.V. (Autor:in) / Nuytkens, P.R. (Autor:in) / Fonstad, C.G. (Autor:in) / Johnson, G.D. (Autor:in) / Goodhue, W.D. (Autor:in) / Donnelly, J.P. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    259898 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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