Metal-semiconductor-metal (MSM) photodetectors detecting at 1.3 and 1.55 /spl mu/m are attractive for integration in OEIC receiver circuits because of their low capacitance per unit area. We report herein for the first time MSMs with high responsivities at 1.3 /spl mu/m which have fingers on the bottom of the devices, namely, an inverted MSM (IMSM).


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    Title :

    High responsivity, high speed InP-based inverted MSM photodetectors


    Contributors:
    Vendier, O. (author) / Jokerst, N.M. (author) / Leavitt, R.P. (author)


    Publication date :

    1995-01-01


    Size :

    161546 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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