Metal-semiconductor-metal (MSM) photodetectors detecting at 1.3 and 1.55 /spl mu/m are attractive for integration in OEIC receiver circuits because of their low capacitance per unit area. We report herein for the first time MSMs with high responsivities at 1.3 /spl mu/m which have fingers on the bottom of the devices, namely, an inverted MSM (IMSM).
High responsivity, high speed InP-based inverted MSM photodetectors
1995-01-01
161546 byte
Conference paper
Electronic Resource
English
High Responsivity, High Speed InP-Based Inverted MSM Photodetectors
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