Summary form only given. Advances in optical transmission systems have created needs for higher performance detectors on their receiving end. Three requirements that have driven detector design have been lower cost, higher sensitivity, and wavelength selectivity. To meet each of these challenges, a new fabrication technique called wafer fusion has been used. Cost issues have been addressed by using fusion to integrate InGaAs on Si with the aim of eventual integration with VLSI circuitry.


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    Title :

    High-speed wafer-fused photodetectors


    Contributors:


    Publication date :

    1997-01-01


    Size :

    145150 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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