In the process of implementing separate absorption multiplication (SAM) avalnche photodiodes (APDs) into resonant-cavity structures we have found it necessary to reduce the dimensions of the multiplication region and this has led to improved and intriguing avalanche characteristics. This talk will focus on two types of resonant-cavity photodiodes: Si-based p-i-n photodiodes and SAM APDs.


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    Title :

    High-speed, resonant-cavity photodetectors


    Contributors:


    Publication date :

    1997-01-01


    Size :

    235025 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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