In the process of implementing separate absorption multiplication (SAM) avalnche photodiodes (APDs) into resonant-cavity structures we have found it necessary to reduce the dimensions of the multiplication region and this has led to improved and intriguing avalanche characteristics. This talk will focus on two types of resonant-cavity photodiodes: Si-based p-i-n photodiodes and SAM APDs.
High-speed, resonant-cavity photodetectors
01.01.1997
235025 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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