In the process of implementing separate absorption multiplication (SAM) avalnche photodiodes (APDs) into resonant-cavity structures we have found it necessary to reduce the dimensions of the multiplication region and this has led to improved and intriguing avalanche characteristics. This talk will focus on two types of resonant-cavity photodiodes: Si-based p-i-n photodiodes and SAM APDs.


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    Titel :

    High-speed, resonant-cavity photodetectors


    Beteiligte:
    Campbell, J.C. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    235025 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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