Summary form only given. Advances in optical transmission systems have created needs for higher performance detectors on their receiving end. Three requirements that have driven detector design have been lower cost, higher sensitivity, and wavelength selectivity. To meet each of these challenges, a new fabrication technique called wafer fusion has been used. Cost issues have been addressed by using fusion to integrate InGaAs on Si with the aim of eventual integration with VLSI circuitry.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-speed wafer-fused photodetectors


    Beteiligte:
    Hawkins, A.R. (Autor:in) / Bowers, J.E. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    145150 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High-Speed Wafer-Fused Photodetectors

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    High Speed, Resonant-Cavity Photodetectors

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    InP-Based High-Speed Photodetectors

    Beling, A. / Campbell, J.C. | British Library Online Contents | 2009



    InP-Based High-Speed Photodetectors

    Beling, A. / Campbell, J.C. | British Library Online Contents | 2009