Metal-semiconductor-metal (MSM) photodetectors detecting at 1.3 and 1.55 /spl mu/m are attractive for integration in OEIC receiver circuits because of their low capacitance per unit area. We report herein for the first time MSMs with high responsivities at 1.3 /spl mu/m which have fingers on the bottom of the devices, namely, an inverted MSM (IMSM).


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    Titel :

    High responsivity, high speed InP-based inverted MSM photodetectors


    Beteiligte:
    Vendier, O. (Autor:in) / Jokerst, N.M. (Autor:in) / Leavitt, R.P. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    161546 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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