This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al/sub 0.4/Ga/sub 0.6/As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 /spl mu/m cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.


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    Title :

    1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition


    Contributors:
    Tatebayashi, J. (author) / Hatori, N. (author) / Ishida, M. (author) / Ebe, H. (author) / Sudou, H. (author) / Kuramata, A. (author) / Sugawara, M. (author) / Arakawa, Y. (author)


    Publication date :

    2004-01-01


    Size :

    197138 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English