We report the fabrication of 10-channel electro-absorption (EA) modulator arrays using a lattice-matched InGaAs/InGaAsP MQW structure. The fabrication method is based on the combination of using gray mask lithography and a low-energy arsenic (As) ion-implantation induced disordering (IIID) process. To understand how the QWI process may affect polarisation performance, a theoretical model based on different rates of group III and group V interdiffusion has also been developed.
Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip
2001-01-01
196757 byte
Conference paper
Electronic Resource
English
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