We report the fabrication of 10-channel electro-absorption (EA) modulator arrays using a lattice-matched InGaAs/InGaAsP MQW structure. The fabrication method is based on the combination of using gray mask lithography and a low-energy arsenic (As) ion-implantation induced disordering (IIID) process. To understand how the QWI process may affect polarisation performance, a theoretical model based on different rates of group III and group V interdiffusion has also been developed.


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    Title :

    Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip


    Contributors:
    Ng, S.L. (author) / Djie, H.S. (author) / Lim, H.S. (author) / Ooi, B.S. (author) / Lam, Y.L. (author) / Chan, Y.C. (author) / Dowd, P. (author) / Aimez, V. (author) / Beauvais, J. (author) / Beerens, J. (author)


    Publication date :

    2001-01-01


    Size :

    196757 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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