The effects of n-doped SCH region length t/sub n/ as well as the general structure parameters in EA modulators were thoroughly analyzed. It was found that t/sub n/ played a crucial role to achieve high-performances in addition to the detuning /spl Delta//spl lambda/.


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    Title :

    SCH doping effects in a 1.55 /spl mu/m InGaAsP/InGaAsP MQW electro-absorption modulator


    Contributors:


    Publication date :

    2001-01-01


    Size :

    138891 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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