The effects of n-doped SCH region length t/sub n/ as well as the general structure parameters in EA modulators were thoroughly analyzed. It was found that t/sub n/ played a crucial role to achieve high-performances in addition to the detuning /spl Delta//spl lambda/.
SCH doping effects in a 1.55 /spl mu/m InGaAsP/InGaAsP MQW electro-absorption modulator
2001-01-01
138891 byte
Conference paper
Electronic Resource
English
SCH Doping Effects in a 1.55um InGaAsP/InGaAsP MQW Electro-Absorption Modulator
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