The effects of n-doped SCH region length t/sub n/ as well as the general structure parameters in EA modulators were thoroughly analyzed. It was found that t/sub n/ played a crucial role to achieve high-performances in addition to the detuning /spl Delta//spl lambda/.


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    Titel :

    SCH doping effects in a 1.55 /spl mu/m InGaAsP/InGaAsP MQW electro-absorption modulator


    Beteiligte:
    Jongin Shim, (Autor:in) / Yungseon Eo, (Autor:in) / Donghoon Jang, (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    138891 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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