We report the fabrication of 10-channel electro-absorption (EA) modulator arrays using a lattice-matched InGaAs/InGaAsP MQW structure. The fabrication method is based on the combination of using gray mask lithography and a low-energy arsenic (As) ion-implantation induced disordering (IIID) process. To understand how the QWI process may affect polarisation performance, a theoretical model based on different rates of group III and group V interdiffusion has also been developed.


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    Titel :

    Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip


    Beteiligte:
    Ng, S.L. (Autor:in) / Djie, H.S. (Autor:in) / Lim, H.S. (Autor:in) / Ooi, B.S. (Autor:in) / Lam, Y.L. (Autor:in) / Chan, Y.C. (Autor:in) / Dowd, P. (Autor:in) / Aimez, V. (Autor:in) / Beauvais, J. (Autor:in) / Beerens, J. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    196757 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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