In this paper, we have fabricated a resonant cavity enhanced (RCE) Ge-on-double-silicon on insulator (SOI) photodetector for operation around the 1550 nm communication wavelength. The enhanced response of this detector is attributed to both the resonant cavity effect as well as the strain induced band gap narrowing of the Ge layer.


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    Title :

    Germanium on double-SOI photodetectors for 1550 nm operation


    Contributors:
    Dosunmu, O. (author) / Emsley, M.K. (author) / Cannon, D.D. (author) / Ghyselen, B. (author) / Kimerling, L.C. (author) / Unlu, M.S. (author)


    Publication date :

    2003-01-01


    Size :

    154520 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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