We have fabricated high-speed resonant cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the resonant wavelength of 1540 nm.


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    Title :

    High speed resonant-cavity enhanced Ge photodetectors on reflecting Si substrates for 1550 nm operation


    Contributors:
    Dosunmu, O.I. (author) / Cannon, D.D. (author) / Emsley, M.K. (author) / Kimerling, L.C. (author) / Unlu, M.S. (author)


    Publication date :

    2004-01-01


    Size :

    148973 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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