We have fabricated high-speed resonant cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the resonant wavelength of 1540 nm.
High speed resonant-cavity enhanced Ge photodetectors on reflecting Si substrates for 1550 nm operation
2004-01-01
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Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2004
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