In this paper, we have fabricated a resonant cavity enhanced (RCE) Ge-on-double-silicon on insulator (SOI) photodetector for operation around the 1550 nm communication wavelength. The enhanced response of this detector is attributed to both the resonant cavity effect as well as the strain induced band gap narrowing of the Ge layer.


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    Titel :

    Germanium on double-SOI photodetectors for 1550 nm operation


    Beteiligte:
    Dosunmu, O. (Autor:in) / Emsley, M.K. (Autor:in) / Cannon, D.D. (Autor:in) / Ghyselen, B. (Autor:in) / Kimerling, L.C. (Autor:in) / Unlu, M.S. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    154520 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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