The presence of a point electron trap and dislocation related electron trap in n-type lattice-mismatched InGaAs/GaAs heterostructure has been studied by means of deep level transient spectroscopy (DLTS). The dislocation trap with activation energy 0.43 eV has been attributed to the "localized" states at misfit dislocations close to the interface. The latter trap has been identified as a native point defect, called EL2 in the literature. The DLTS abilities of analysis and identification of deep energy levels related to dislocations has been presented.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Dislocation in lattice-mismatched InGaAs/GaAs heterostructures as a factor of optoelectronic device degradation


    Contributors:


    Publication date :

    2005-01-01


    Size :

    431266 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English