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    Title :

    MBE growth of high-quality GaAs heterostructures for optoelectronic devices [2886-565]



    Conference:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Publication date :

    1996-01-01


    Size :

    6 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Nr. 2886

    DataCite | 1900


    LPE growth of high-power InGaAsP/GaAs SCH SQW lasers [2886-547]

    Bo, B. / Zhang, B. / Zhu, B. et al. | British Library Conference Proceedings | 1996


    0.808-m InGaAsP/GaAs SCH lasers [2886-566]

    Zhu, B. / Zhang, X. / Bo, B. et al. | British Library Conference Proceedings | 1996


    Deep levels in HgCdTe photodectectors [2886-569]

    Kang, J. / Huang, Q. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1996


    High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]

    Hua, J. / Guan, X. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1996