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    Title :

    LPE growth of high-power InGaAsP/GaAs SCH SQW lasers [2886-547]



    Conference:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Publication date :

    1996-01-01


    Size :

    2 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    0.808-m InGaAsP/GaAs SCH lasers [2886-566]

    Zhu, B. / Zhang, X. / Bo, B. et al. | British Library Conference Proceedings | 1996


    Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser [2886-549]

    Wang, L. J. / Wu, S. L. / Diaz, J. et al. | British Library Conference Proceedings | 1996


    1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]

    An, H. / Yang, S. / Sun, H. et al. | British Library Conference Proceedings | 1996


    Wafer bonding technique for fabricating 1.5-m InGaAs/InGaAsP pillar-free microdisk lasers [2886-548]

    Wu, S. / Wang, L. / Zhang, J. et al. | British Library Conference Proceedings | 1996


    Nr. 2886

    DataCite | 1900