The presence of a point electron trap and dislocation related electron trap in n-type lattice-mismatched InGaAs/GaAs heterostructure has been studied by means of deep level transient spectroscopy (DLTS). The dislocation trap with activation energy 0.43 eV has been attributed to the "localized" states at misfit dislocations close to the interface. The latter trap has been identified as a native point defect, called EL2 in the literature. The DLTS abilities of analysis and identification of deep energy levels related to dislocations has been presented.
Dislocation in lattice-mismatched InGaAs/GaAs heterostructures as a factor of optoelectronic device degradation
01.01.2005
431266 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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