Fully-strained and high-quality Ge-rich SiGe films are grown on Ge-lattice-matched substrates by molecular beam epitaxy. Ge/SiGe quantum well structures are characterized by low-temperature photoluminescence and exhibit efficient quantum confinement and band edge emission.
Growth and characterization of SiGe layers on Ge-lattice-matched substrates by MBE for long wavelength optical devices
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 2137-2139 Vol. 3
2005-01-01
758474 byte
Conference paper
Electronic Resource
English
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