Fully-strained and high-quality Ge-rich SiGe films are grown on Ge-lattice-matched substrates by molecular beam epitaxy. Ge/SiGe quantum well structures are characterized by low-temperature photoluminescence and exhibit efficient quantum confinement and band edge emission.


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    Title :

    Growth and characterization of SiGe layers on Ge-lattice-matched substrates by MBE for long wavelength optical devices


    Contributors:
    Kuo, Y.H. (author) / Yu, X. (author) / Fu, J. (author) / Solomon, G.S. (author) / Harris, J.S. (author) / Kamins, T.I. (author)


    Publication date :

    2005-01-01


    Size :

    758474 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





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