We report a novel semionductor optical amplifier device design that incorporates delta-strained quantum wells to achieve polarization insensitivity at a wavelength of 1.55 /spl mu/m. Solid source molecular beam epitaxy (MBE) was used to grow a GaInAsP-InP separate confinement heterostructure (SCH) with six lattice matched GaInAs quantum wells, each containing three thin, highly tensile strained GaAs layers.


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    Title :

    Polarization insensitive 1.55 /spl mu/m optical amplifier with GaAs delta-strained Ga/sub 0.47/In/sub 0.53/As quantum wells


    Contributors:
    Seiferth, F. (author) / Johnson, F.G. (author) / Merritt, S.A. (author) / Fox, S. (author) / Whaley, R.D. (author) / Chen, Y.J. (author) / Dagenais, M. (author) / Stone, D.R. (author)


    Publication date :

    1997-01-01


    Size :

    208808 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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