We report a novel semionductor optical amplifier device design that incorporates delta-strained quantum wells to achieve polarization insensitivity at a wavelength of 1.55 /spl mu/m. Solid source molecular beam epitaxy (MBE) was used to grow a GaInAsP-InP separate confinement heterostructure (SCH) with six lattice matched GaInAs quantum wells, each containing three thin, highly tensile strained GaAs layers.
Polarization insensitive 1.55 /spl mu/m optical amplifier with GaAs delta-strained Ga/sub 0.47/In/sub 0.53/As quantum wells
1997-01-01
208808 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1997
|British Library Online Contents | 2003
|Polarization-Insensitive Optical Amplifiers Using Tensile-Strained Quantum Wells
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