We report a novel semionductor optical amplifier device design that incorporates delta-strained quantum wells to achieve polarization insensitivity at a wavelength of 1.55 /spl mu/m. Solid source molecular beam epitaxy (MBE) was used to grow a GaInAsP-InP separate confinement heterostructure (SCH) with six lattice matched GaInAs quantum wells, each containing three thin, highly tensile strained GaAs layers.


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    Titel :

    Polarization insensitive 1.55 /spl mu/m optical amplifier with GaAs delta-strained Ga/sub 0.47/In/sub 0.53/As quantum wells


    Beteiligte:
    Seiferth, F. (Autor:in) / Johnson, F.G. (Autor:in) / Merritt, S.A. (Autor:in) / Fox, S. (Autor:in) / Whaley, R.D. (Autor:in) / Chen, Y.J. (Autor:in) / Dagenais, M. (Autor:in) / Stone, D.R. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    208808 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997



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    A Novel Structure of Delta-Strained Quantum Well for Polarization Insensitive Semiconductor Devices at 1.55m

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