Polarization-control issue in the semiconductor laser amplifier (SLA) is very important for its integration with optics such as waveguide-based devices. So far, two types of approaches have been tried for the polarization insensitive amplification in the SLA. Propagation characteristics of active waveguide was controlled to accomplish polarization-insensitive amplification through a controlled optical confinements for TE- and TM-mode. A square shaped active waveguide was employed in a polarization-insensitive SLA. Another approach is based on the modified electronic structure by strain, which can control electronic transitions for the TE- and the TM-modes. We have proposed and demonstrated a polarization-insensitive SLA with a tensile-strained MQW structure at 1.5 /spl mu/m band. In this paper, we describe the polarization insensitive SLA using the tensile-strained InGaAsP-InGaAsP MQW structure as active layer material. The optimization of device structure and strain is discussed toward the polarization-insensitive amplification.<>


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    Title :

    Polarization-insensitive optical amplifiers using tensile-strained quantum wells


    Contributors:
    Kamijoh, T. (author) / Horikawa, H. (author) / Nakajima, M. (author) / Xu, C.Q. (author) / Matsui, Y. (author) / Kawahara, M. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    126128 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993



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