We have successfully fabricated high performance 0.98 /spl mu/m InGaAs-InGaAsP-AlGaAs diode lasers. This material system demonstrated the advantages of flexibility in structure design, simple epitaxial growth, improvement of surface morphology, low vertical beam divergence, high efficiency, high characteristic temperature, and superior reliability.


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    Title :

    High performance InGaAs/InGaAsP/AlGaAs diode lasers (/spl lambda/=0.98 /spl mu/m) grown by MOCVD


    Contributors:
    Yang, G. (author) / Hwu, R.J. (author) / Chern, J.H. (author) / Sadwick, L. (author) / Xu, Z.T. (author)


    Publication date :

    1999-01-01


    Size :

    165655 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





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