Characterization of 1.48 m High Power InGaAs/InGaAsP Multiple Quantum Well Lasers Grown by Low-Pressure MOCVD
1st International symposium; 184th Meeting, Long wavelength infrared detectors and arrays: physics and applications ; 1993 ; New Orleans; LA
1995-01-01
10 pages
Held in conjunction with the 19th state of the art program on compound semiconductors (SOTAPOCS XIX)
Conference paper
English
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1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]
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