We have successfully fabricated high performance 0.98 /spl mu/m InGaAs-InGaAsP-AlGaAs diode lasers. This material system demonstrated the advantages of flexibility in structure design, simple epitaxial growth, improvement of surface morphology, low vertical beam divergence, high efficiency, high characteristic temperature, and superior reliability.


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    Titel :

    High performance InGaAs/InGaAsP/AlGaAs diode lasers (/spl lambda/=0.98 /spl mu/m) grown by MOCVD


    Beteiligte:
    Yang, G. (Autor:in) / Hwu, R.J. (Autor:in) / Chern, J.H. (Autor:in) / Sadwick, L. (Autor:in) / Xu, Z.T. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    165655 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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