Reliability of Carbon Doped MOCVD Grown InGaAs/AlGaAs High Power Laser Diodes
1st, International conference on advanced optoelectronics and lasers; CAOL'2003 ; 2003 ; Alushta, Ukraine
2003-01-01
231 pages
2 v.; HELD JOINTLY WITH 1ST WORKSHOP ON PRECISION OSCILLATIONS IN ELECTRONICS AND OPTICS
Aufsatz (Konferenz)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
808 nm High Power Laser Diodes Based on MOCVD Grown AlGaAs/GaAs Broad Waveguide Heterostructures
British Library Conference Proceedings | 2003
|High Performance InGaAs/InGaAsP/AlGaAs Diode Lasers (Lambda=0.98 mum) Grown by MOCVD
British Library Conference Proceedings | 1999
|0.98 m Wavelength InGaAs/GaAs/AlGaAs Strained Quantum-Well Laser Diodes with High Reliability
British Library Conference Proceedings | 1997
|