This paper reports the development of the separate confinement broad waveguide AlGaAs/GaAs heterostructures grown by low pressure metal organic chemical vapor deposition (LP MOCVD) for high power laser diodes operated at 808 nm.
808 nm high power laser diodes based on MOCVD grown AlGaAs/GaAs broad waveguide heterostructures
01.01.2003
52098 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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