This paper reports the development of the separate confinement broad waveguide AlGaAs/GaAs heterostructures grown by low pressure metal organic chemical vapor deposition (LP MOCVD) for high power laser diodes operated at 808 nm.


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    Titel :

    808 nm high power laser diodes based on MOCVD grown AlGaAs/GaAs broad waveguide heterostructures


    Beteiligte:
    Marmalyuk, A.A. (Autor:in) / Padalitsa, A.A. (Autor:in) / Nikitin, D.B. (Autor:in) / Bulaev, P.V. (Autor:in) / Sukharev, A.V. (Autor:in) / Zalevsky, I.D. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    52098 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    Bulaev, P. V. / Marmalyuk, A. A. / Padalitsa, A. A. et al. | British Library Conference Proceedings | 2003


    Reliability of carbon doped MOCVD grown InGaAs/AlGaAs high power laser diodes

    Bulaev, P.V. / Marmalyuk, A.A. / Padalitsa, A.A. et al. | IEEE | 2003



    High Characteristic Temperature of GaInNAs/GaAs Narrow-Ridge Waveguide Laser Diodes Grown by MOCVD

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004