Using metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE) it is possible to grow different layer thicknesses and compositions on different areas of a wafer in a single growth step. This makes possible the integration of discrete devices and enables the fabrication of advanced devices.


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    Title :

    Selective area epitaxy for photonic integrated circuits and advanced devices


    Contributors:
    Coleman, J.J. (author) / Swint, R.B. (author) / Yeoh, T.S. (author) / Elarde, V.C. (author)


    Publication date :

    2002-01-01


    Size :

    424760 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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