Using metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE) it is possible to grow different layer thicknesses and compositions on different areas of a wafer in a single growth step. This makes possible the integration of discrete devices and enables the fabrication of advanced devices.
Selective area epitaxy for photonic integrated circuits and advanced devices
2002-01-01
424760 byte
Conference paper
Electronic Resource
English
Selective Area Epitaxy for Photonic Integrated Circuits and Advanced Devices (invited)
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