Using metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE) it is possible to grow different layer thicknesses and compositions on different areas of a wafer in a single growth step. This makes possible the integration of discrete devices and enables the fabrication of advanced devices.
Selective area epitaxy for photonic integrated circuits and advanced devices
01.01.2002
424760 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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