Using metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE) it is possible to grow different layer thicknesses and compositions on different areas of a wafer in a single growth step. This makes possible the integration of discrete devices and enables the fabrication of advanced devices.


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    Titel :

    Selective area epitaxy for photonic integrated circuits and advanced devices


    Beteiligte:
    Coleman, J.J. (Autor:in) / Swint, R.B. (Autor:in) / Yeoh, T.S. (Autor:in) / Elarde, V.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    424760 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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