Summary form only given. High-speed avalanche photodiodes (APDs) are often used in optical communication systems due to their increased sensitivity as compared to conventional p-i-n photodetectors. The crucial performance parameters for this application are low multiplication noise and high gain-bandwidth. Recently, we have demonstrated low multiplication noise and record gain-bandwidth product (290 GHz) using an AlGaAs-GaAs-InGaAs resonant-cavity APD with separate absorption, charge and multiplication (SACM) regions. Those devices operated in the wavelength range near 0.9 /spl mu/m. In this paper, we have extended this work to 1.55 /spl mu/m using InAlAs-lnGaAs materials system.
Resonant-cavity InGaAs-InAlAs separate absorption, charge and multiplication avalanche photodiodes
1998-01-01
337015 byte
Conference paper
Electronic Resource
English
Resonant-Cavity InGaAs/InAlAs Separate Absorption, Charge and Multiplication Avalanche Photodiodes
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