We report separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm corresponding to unity gain after reach-through was achieved. Gain higher than 1000 was demonstrated without edge breakdown.


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    Title :

    Ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes


    Contributors:
    Xiangyi Guo, (author) / Rowland, L.B. (author) / Dunne, G.T. (author) / Fronheiser, J.A. (author) / Sandvik, P.M. (author) / Beck, A.L. (author) / Campbell, J.C. (author)


    Publication date :

    2005-01-01


    Size :

    330993 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Ultraviolet Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005



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