We report separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm corresponding to unity gain after reach-through was achieved. Gain higher than 1000 was demonstrated without edge breakdown.
Ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes
2005-01-01
330993 byte
Conference paper
Electronic Resource
English
Ultraviolet Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
British Library Conference Proceedings | 2005
|Resonant-Cavity InGaAs/InAlAs Separate Absorption, Charge and Multiplication Avalanche Photodiodes
British Library Conference Proceedings | 1998
|British Library Online Contents | 2001
|British Library Online Contents | 2009
|